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A Materials Platform for Next-Generation Computing and Communications
Carbon nanotube wafers are functional wafers engineered through the advanced dispersion, self-assembly, transfer, and patterning of high-purity, highly aligned semiconducting carbon nanotubes. Serving as foundational materials for the carbon-based semiconductor industry in the Beyond Moore era, they provide a new paradigm to break through traditional silicon bottlenecks, enabled by their ultra-high carrier mobility, intrinsic nanoscale dimensions, and seamless CMOS compatibility.
Through subsequent lithography, etching, thin-film deposition, and integration processes, carbon nanotube wafers can be fabricated into a series of high-performance electronic devices and chips, including carbon nanotube transistors, CNT 3D capacitors, high-frequency/RF devices, and advanced node integrated circuits. Inherently featuring high speed, low power consumption, and high frequency, these devices primarily serve pioneering fields with stringent requirements for compute performance, energy efficiency, and operating frequency:
High-Performance ComputingDelivering foundational compute support for next-generation data centers and AI acceleration chips.
High-Frequency CommunicationsApplied in core RF components within 5G/6G communications, millimeter-wave radar, and terahertz technologies.
Low-Power AI ChipsSignificantly enhancing interconnect density, increasing AI computing bandwidth, and reducing operational power consumption through monolithic 3D heterogeneous integration.
Size: 4-inch / 8-inch
Diameter: 1.0 ± 0.1 nm
Density: ~360tubes/µm
Semiconducting Purity:>99.9999％
Substrate: Including but not limited to Silicon Oxide (SiO2), Silicon Nitride (Si3N4), Glass, and Quartz
Peak information
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 1590~1596 | 17800~19600 |
| 2 | 1320~1330 | 400~500 |
G/D: 35.6~49.00
Peak information of RBM (Single-point)
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 233~236 | 700~800 |
CNT Diameter: 0.95~0.96 nm
（Experience）
Size: 4-inch / 8-inch
Diameter: 1.2 ± 0.1 nm
Density: ~360tubes/µm
Semiconducting Purity:>99.9999％
Substrate: Including but not limited to Silicon Oxide (SiO2), Silicon Nitride (Si3N4), Glass, and Quartz
Peak information
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 1590~1600 | 18000~19000 |
| 2 | 1325~1340 | 440~520 |
G/D: 34.62~43.19
Peak information of RBM (Single-point)
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 193~196 | 950~1050 |
CNT Diameter: 1.14~1.16 nm
（Experience）
Size: 4-inch / 8-inch
Diameter: 1.4 ± 0.1 nm
Density: ~360tubes/µm
Semiconducting Purity:>99.9999％
Substrate: Including but not limited to Silicon Oxide (SiO2), Silicon Nitride (Si3N4), Glass, and Quartz
Peak information
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 1593~1595 | 18750~18900 |
| 2 | 1333~1340 | 450~480 |
G/D: 39.0~42.0
Peak information of RBM (Single-point)
| Rank | Raman shift (range) / cm-1 | Abs.Intensity (range) |
| 1 | 170~173 | 930~1000 |
Carbon nanotube diameter: 1.30-1.32 nm
（Experience）
Carbon nanotube crystal round technology challenge, one click docking professional solution.
Tel:+86 512 6258 0966
Tel:+86 180 0621 8012
E-mail:service@cs-tec.com.cn
Address:Building 23, No. 75 Putian Road, Suzhou Industrial Park, Jiangsu Province, China
